Application
It can be applied to the third generation s→≥₹emiconductor high-power devices, high-power±£™ lasers and microelectronic thermal sink dev§§♥≈ices.
|
Thermal Conductivit≈π y |
Polycrystalline Diamond |
800～1500W/（m·K） |
|
Single Crystalline σ¥Diamond |
1500～2300W/（m·K） |
|
|
Thermal Expansion |
10-6·K-1 |
|
Return
